Title :
Temperature possibilities of GaAs membrane pressure sensor
Author :
Baranov, A.V. ; Dragunov, V.P.
Author_Institution :
Dept. of Phys., Novosibirsk State Tech. Univ., Russia
Abstract :
Results have been given of a calculation and of an experimental study of the GaAs membrane pressure sensor (MPS) characteristics. The analysis of our results shows that GaAs MPS have the sensitivity and output signal only twice smaller than analogous Si MPS with diffusion tensoresistors and closely spaced characteristics for Si MPS with polycrystalline thermoresistors
Keywords :
III-V semiconductors; gallium arsenide; microsensors; piezoresistive devices; pressure sensors; GaAs; anisotropic etching; membrane deflection; membrane pressure sensor; output signal; piezoresistors; sensitivity; Anisotropic magnetoresistance; Biomembranes; Bridge circuits; Gallium arsenide; Leakage current; Sensor phenomena and characterization; Silicon; Temperature dependence; Temperature distribution; Temperature sensors;
Conference_Titel :
Electronic Instrument Engineering Proceedings, 1998. APEIE-98. Volume 1. 4th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
0-7803-4938-5
DOI :
10.1109/APEIE.1998.769013
