The hot-carrier degradation mechanism of p-DDDMOS transistor with different p-drift dosage

Author

Liu, Siyang ; Sun, Weifeng ; Wan, Weijun ; Qian, Qinsong ; Sun, Hu

Author_Institution

Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

Hot-carrier-induced degradation in the p-type double diffusion drain MOS (p-DDDMOS) transistor with different p-drift dosage is investigated. Basing on the experimental data and T-CAD simulations, hot-electron injection into the oxide of the p-drift region near the channel has been found, leading to the on-resistance (Ron) decrease, however, no hot-carrier degradation is observed in the channel region. The experimental results also show that higher p-drift dosage will result in much more serious degradation due to much more hot electron injection and trapping.

Keywords

MOSFET; hot carriers; technology CAD (electronics); T-CAD simulations; hot electron injection; hot electron trapping; hot-carrier-induced degradation; p-DDDMOS transistor; p-drift dosage; p-type double diffusion drain MOS transistor; Degradation; Electric fields; Hot carriers; Impact ionization; Silicon; Stress; Transistors; Hot-carrier Degradation; p-DDDMOS; p-drift Dosage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117684

Filename

6117684