Title :
A 17.5dBm IIP3 high linear fully differential RF CMOS amplifier
Author :
Yan, T.T. ; Shen, X.B. ; Jiang, P.C. ; Zhou, J.J.
Author_Institution :
Sch. of Microelectron., Shanghai Jiao Tong Univ., Shanghai, China
Abstract :
A high linear fully differential RF CMOS amplifier covering UHF band is presented in this paper. A novel structure with both NMOS and PMOS differential pairs is proposed to cancel IM3 induced by 1st order derivative of transconductance (gm\´) and 2nd order derivative of transconductance (gm"). With appropriate DC operating points and aspect ratios, the RF CMOS amplifier achieves 12.5dB noise figure (NF), 10.5dB voltage gain and 17.5dBm input third order intercept point (IIP3) with total current consumption of 2mA from 1.8V voltage supply. The proposed amplifier is designed in TSMC 0.18μm CMOS process.
Keywords :
CMOS analogue integrated circuits; MOSFET; UHF amplifiers; differential amplifiers; IIP3; NMOS differential pair; PMOS differential pair; UHF band; current 2 mA; differential RF CMOS amplifier; noise figure 12.5 dB; size 0.18 mum; transconductance; voltage 1.8 V; CMOS integrated circuits; Differential amplifiers; Gain; Linearity; MOS devices; Radio frequency; Transconductance; Fully differential amplifier; IIP3; IM3; gm"; gm´; high linearity;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117697
