Investigation of InGaP/InGaAs pseudomorphic triple doped-channel field-effect transistors

Author

Tsai, Jung-Hui ; Jhou, Jia-Cing ; Ou-Yang, Jhih-Jhong

Author_Institution

Dept. of Electron. Eng., Nat. Kaohsiung Normal Univ., Kaohsiung, Taiwan

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

The comparison of DC performance on InGaP/InGaAs pseudomorphic field-effect transistors with triple doped-channel profiles is demonstrated. As compared to the uniform and high-medium-low doped-channel devices, the low-medium-high doped-channel device exhibits the broadest gate voltage swing and the best device linearity. Experimentally, the transconductance within 50% of its maximum value for gate voltage swing is 4.62 V in the low-medium-high doped-channel device, which is greater than 3.58 (3.30) V in the uniform (high-medium-low) doped-channel device.

Keywords

field effect transistors; InGaP-InGaAs; device linearity; doped-channel device; gate voltage swing; maximum value; pseudomorphic triple doped-channel field effect transistors; transconductance; triple doped-channel profiles; voltage 3.58 V; voltage 4.62 V; Doping profiles; Gallium arsenide; Indium gallium arsenide; Logic gates; Threshold voltage; Transconductance; Transistors; InGaP/InGaAs; field-effect transistor; gate voltage swing; pseudomorphic; transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117698

Filename

6117698