DocumentCode :
2851175
Title :
Modeling a microwave power transistor
Author :
Harrison, Rob
Author_Institution :
RCA Ltd., Montreal, Canada
Volume :
XIV
fYear :
1971
fDate :
17-19 Feb. 1971
Firstpage :
36
Lastpage :
37
Abstract :
Computer simulation of a 2-GHz, 1-W overlay transistor under realistic conditions has disclosed that simple models provide good results when impedances and package parasitics are properly characterized. Predicted and measured performance will be compared.
Keywords :
Circuits; Coaxial components; Impedance measurement; Laboratories; Microwave transistors; Power amplifiers; Power measurement; Power transistors; Q measurement; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1971 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1971.1154925
Filename :
1154925
Link To Document :
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