Bandwidth Extension of CMOS Transimpedance Amplifier Using On-Chip Spiral Inductor

Author

Hasaneen, El-Sayed A M ; Wahab, Mohamed A A ; Okaley, Nagwa

Author_Institution

El-Minia Univ., El-Minia

fYear

2007

fDate

16-18 Dec. 2007

Firstpage

43

Lastpage

46

Abstract

This paper presents bandwidth extension of differential CMOS transimpedance amplifier (TIA) using on-chip inductor techniques. On-chip spiral inductor is connected in series with the output node to enhance the bandwidth. The effects of the inductor nonidealities are included in the design. Simple and accurate inductor lumped circuit model is used in analyzes. Simulation results show that the bandwidth is increased by 47% by using on-chip spiral inductor. Without on-chip inductor the bandwidth is 27.764 GHz and it is extended to 41.009 GHz. The total load resistance is partitioned between the inductor series resistance and an external load resistance to reduce the nonideality of the on-chip inductor and improve the bandwidth with no additional power dissipation.

Keywords

CMOS analogue integrated circuits; differential amplifiers; inductors; lumped parameter networks; microwave amplifiers; operational amplifiers; CMOS transimpedance amplifier; bandwidth 27.764 GHz; bandwidth extension; differential amplifier; external load resistance; inductor lumped circuit model; inductor series resistance; on-chip spiral inductor; Bandwidth; Broadband amplifiers; Circuit simulation; Inductance; Inductors; Parasitic capacitance; Radio frequency; Radiofrequency amplifiers; Silicon; Spirals; bandwidth extension; on-chip inductor model; transimpedance amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Design and Test Workshop, 2007. IDT 2007. 2nd International

Conference_Location

Cairo

Print_ISBN

978-1-4244-1824-4

Electronic_ISBN

978-1-4244-1825-1

Type

conf

DOI

10.1109/IDT.2007.4437425

Filename

4437425