Impact of stress on band-to-band tunneling current in SOI MOSFET based on first-principles calculation

Author

Li, Y.Z. ; Zhang, L.J. ; Wang, Z.O. ; Chen, Z. ; Li, Y.Z. ; Lu, Z.H. ; Mao, L.F.

Author_Institution

Sch. of Electron. & Inf. Eng., Soochow Univ., Suzhou, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

The effect of hydrostatic tensile stress on the band structures of silicon have been theoretically investigated based on the first-principles calculation. The calculations demonstrate that the electron effective mass for stressed structure becomes 3.71% smaller than that for unstressed, whereas the band gap for stressed structure is 4.96% larger than unstressed one. At last, the impact of these changes on band-to-band tunneling leakage current in silicon-on-insulator MOSFET was calculated. And the calculated result shows that the tunneling leakage current decreases due to these changes.

Keywords

MOSFET; leakage currents; silicon-on-insulator; SOI MOSFET; band structures; band-to-band tunneling current; band-to-band tunneling leakage current; electron effective mass; first-principles calculation; hydrostatic tensile stress; silicon-on-insulator MOSFET; stressed structure; Effective mass; Leakage current; Photonic band gap; Silicon; Tensile stress; Tunneling; Band-to-band tunneling; SOI MOSFET; effective mass; first-principles; hydrostatic tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117710

Filename

6117710