Title :
Impact of stress on band-to-band tunneling current in SOI MOSFET based on first-principles calculation
Author :
Li, Y.Z. ; Zhang, L.J. ; Wang, Z.O. ; Chen, Z. ; Li, Y.Z. ; Lu, Z.H. ; Mao, L.F.
Author_Institution :
Sch. of Electron. & Inf. Eng., Soochow Univ., Suzhou, China
Abstract :
The effect of hydrostatic tensile stress on the band structures of silicon have been theoretically investigated based on the first-principles calculation. The calculations demonstrate that the electron effective mass for stressed structure becomes 3.71% smaller than that for unstressed, whereas the band gap for stressed structure is 4.96% larger than unstressed one. At last, the impact of these changes on band-to-band tunneling leakage current in silicon-on-insulator MOSFET was calculated. And the calculated result shows that the tunneling leakage current decreases due to these changes.
Keywords :
MOSFET; leakage currents; silicon-on-insulator; SOI MOSFET; band structures; band-to-band tunneling current; band-to-band tunneling leakage current; electron effective mass; first-principles calculation; hydrostatic tensile stress; silicon-on-insulator MOSFET; stressed structure; Effective mass; Leakage current; Photonic band gap; Silicon; Tensile stress; Tunneling; Band-to-band tunneling; SOI MOSFET; effective mass; first-principles; hydrostatic tensile stress;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117710
