Design of SiGe HBT UWB low noise amplifier employing broadband noise canceling

Author

Ding, Chunbao ; Zhang, Wanrong ; Xie, Hongyun ; Chen, Liang ; Shen, Pei ; Zhang, Donghui ; Liu, Boyu ; Zhou, Yongqiang ; Guo, Zhengjie ; Lu, Zhiyi

Author_Institution

Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

A SiGe HBT low-noise amplifier (LNA) for UWB application is presented. According to the analysis for noise of common base transistor, noise canceling structure for SiGe HBT is proposed to reduce the noise arising from common transistor, thus reduce the noise of LNA. Meanwhile it also compensate the gain of the LNA, thus improves the gain flatness. The chip layout has been designed, its area is 0.56×0.53 mm². The simulation results of the LNA demonstrate that in the range of UWB, the noise figure is reduced 2 dB compared with the case without noise canceling, the gain is 16.4~17.4, gain flatness is ±0.5dB, linearity is -6dBm.

Keywords

heterojunction bipolar transistors; interference suppression; low noise amplifiers; silicon compounds; ultra wideband technology; HBT UWB low noise amplifier; HBT low-noise amplifier; LNA; SiGe; broadband noise canceling; chip layout; common base transistor; gain flatness; noise canceling structure; noise figure; noise reduction; Gain; Heterojunction bipolar transistors; Layout; Noise; Noise measurement; Silicon germanium; Low noise amplifier; Noise canceling; SiGe heterojunction bipolar transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117714

Filename

6117714