A Drain-Extended AlGaN/GaN MISFET for unidirectional switch

Author

Wang, Zhigang ; Zhang, Jing ; Zhang, Bo ; Li, Zhaoji

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China (UESTC), Chengdu, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

A Drain-Extended AlGaN/GaN MISFET (DE-MISFET) has been proposed in this paper. It integrates a normally-OFF channel MISFET with a field-controlled diode (FCD). Compared with the conventional MISFET, the DE-MISFET features reverse blocking function to realize drain self-protection for high reliability. And also it can be manufactured in conventional process. The simulated results show that ON-state current accounting for drain-induced barrier lowering (DIBL) effect of short channel is around 20 kA/cm², and blocking voltage at OFF-state is more than 70 V/μm.

Keywords

III-V semiconductors; MISFET; aluminium compounds; gallium compounds; wide band gap semiconductors; AlGaN-GaN; DIBL effect; FCD; ON-state current; drain-extended MISFET; drain-induced barrier lowering effect; field-controlled diode; high reliability; reverse blocking function; unidirectional switch; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MISFETs; MODFETs; Switches; AlGaN/GaN; FCD; MISFET; field-controlled diode;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117716

Filename

6117716