• DocumentCode
    2851479
  • Title

    A high-performance N-channel MOS-LSI using depletion-type load elements

  • Author

    Masuhara, T. ; Nagata, M. ; Hashimoto, Noriaki

  • Author_Institution
    Hitachi Central Research Laboratory, Tokyo, Japan
  • Volume
    XIV
  • fYear
    1971
  • fDate
    17-19 Feb. 1971
  • Firstpage
    12
  • Lastpage
    13
  • Abstract
    The application of depletion type MOS-FETs to monolithic MOS-LSI with reduced power delay will be covered, noting that a 2048-bit read-only memory with 300-ns access time and 50 μW/bit power dissipation has been achieved.
  • Keywords
    Electron devices; Electron mobility; Equations; Glass; Insulation; MOSFET circuits; Power supplies; Solid state circuits; Switching circuits; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1971 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1971.1154941
  • Filename
    1154941
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2851479