Title :
A high-performance N-channel MOS-LSI using depletion-type load elements
Author :
Masuhara, T. ; Nagata, M. ; Hashimoto, Noriaki
Author_Institution :
Hitachi Central Research Laboratory, Tokyo, Japan
Abstract :
The application of depletion type MOS-FETs to monolithic MOS-LSI with reduced power delay will be covered, noting that a 2048-bit read-only memory with 300-ns access time and 50 μW/bit power dissipation has been achieved.
Keywords :
Electron devices; Electron mobility; Equations; Glass; Insulation; MOSFET circuits; Power supplies; Solid state circuits; Switching circuits; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1971 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1971.1154941
