• DocumentCode
    2851529
  • Title

    A novel structure of high voltage SOI device with Composite Dielectric buried layer

  • Author

    Fan, Jie ; Luo, Xiaorong ; Zhang, Bo ; Li, Zhaoji

  • Author_Institution
    State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • fYear
    2011
  • fDate
    17-18 Nov. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A new high voltage Silicon-On-Insulator (SOI) device structure with Composite Dielectric buried layer (CD SOI) is proposed in this paper. The Composite Dielectric buried layer, which is composed by Si3N4 and low-k (relative permittivity) dielectric, enhances the Breakdown Voltage (BV) and alleviates the self-heating effect (SHE). With the same thicknesses of 1μm SOI layer and 2μm buried layer, the BV of the CD SOI increases to 362V from 287V of the conventional SOI.
  • Keywords
    electric breakdown; silicon-on-insulator; SOI device structure; breakdown voltage; composite dielectric buried layer; high voltage SOI device; low-k dielectric; self-heating effect; silicon-on-insulator; SOI; breakdown voltage; composite dielectric; self-heating effect;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
  • Conference_Location
    Tianjin
  • ISSN
    Pending
  • Print_ISBN
    978-1-4577-1998-1
  • Electronic_ISBN
    Pending
  • Type

    conf

  • DOI
    10.1109/EDSSC.2011.6117719
  • Filename
    6117719
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2851529