Title :
A novel structure of high voltage SOI device with Composite Dielectric buried layer
Author :
Fan, Jie ; Luo, Xiaorong ; Zhang, Bo ; Li, Zhaoji
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A new high voltage Silicon-On-Insulator (SOI) device structure with Composite Dielectric buried layer (CD SOI) is proposed in this paper. The Composite Dielectric buried layer, which is composed by Si3N4 and low-k (relative permittivity) dielectric, enhances the Breakdown Voltage (BV) and alleviates the self-heating effect (SHE). With the same thicknesses of 1μm SOI layer and 2μm buried layer, the BV of the CD SOI increases to 362V from 287V of the conventional SOI.
Keywords :
electric breakdown; silicon-on-insulator; SOI device structure; breakdown voltage; composite dielectric buried layer; high voltage SOI device; low-k dielectric; self-heating effect; silicon-on-insulator; SOI; breakdown voltage; composite dielectric; self-heating effect;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117719
