DocumentCode :
2851573
Title :
Multilevel resistive switching characteristics in Ag/SiO2/Pt RRAM devices
Author :
Yu, D. ; Liu, L.F. ; Chen, B. ; Zhang, FF ; Gao, B. ; Fu, Y.H. ; Liu, X.Y. ; Kang, J.F. ; Zhang, X.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fYear :
2011
fDate :
17-18 Nov. 2011
Firstpage :
1
Lastpage :
2
Abstract :
Ag/SiO2/Pt-based resistive random access memory (RRAM) devices were fabricated and investigated. Multilevel resistive switching (RS) phenomenon was observed in Ag/SiO2/Pt devices under different operation modes. Good endurance and retention characteristics of RRAM device with four resistance states were achieved. The possible mechanism of multilevel RS was discussed.
Keywords :
platinum compounds; random-access storage; silicon compounds; silver compounds; Ag-SiO2-Pt; RRAM device; multilevel resistive switching; resistance states; resistive random access memory; retention characteristics; Current measurement; Electrodes; Resistance; Silicon; Switches; Temperature measurement; Voltage measurement; Multilevel resistive switching; SiO2; resistive memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
ISSN :
Pending
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
Type :
conf
DOI :
10.1109/EDSSC.2011.6117721
Filename :
6117721
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2851573
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