Title :
A high-PAE high-gain 24-GHz fully integrated 0.18-µm CMOS power amplifier using micromachined inductors
Author :
Wang, To-Po ; Chiang, Che-Yi
Author_Institution :
Dept. of Electron. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan
Abstract :
A 24-GHz 0.18-μm CMOS power amplifier (PA) with high power-added efficiency (PAE) and high gain is proposed in this paper. This PA comprises two stages, the first stage is the single-ended triple-cascode stage for gain boosting, and the second stage is the differential power stage for output power enhancement. To further improve the PA performance in terms of power gain and PAE, the fully integrated micromachined inductors are adopted in this work. Based on these approaches, the proposed PA delivers 21.2-dBm saturated output power (Psat), and 24-dB power gain, and 16% PAE. Compared to recently published K-band 0.18-μm CMOS PAs, this proposed PA achieves the superior PAE and power gain.
Keywords :
CMOS analogue integrated circuits; inductors; microwave integrated circuits; microwave power amplifiers; differential power stage; efficiency 16 percent; frequency 24 GHz; fully integrated micromachined inductors; gain 24 dB; high power-added efficiency; high-PAE high-gain fully integrated CMOS power amplifier; output power enhancement; single-ended triple-cascode stage; size 0.18 mum; CMOS integrated circuits; CMOS technology; Gain; Inductors; K-band; Power amplifiers; Power generation; Power amplifier (PA); micromachined inductor; power-added efficiency (PAE); saturated output power (Psat);
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117722
