Title :
3D Monte Carlo simulation of Gate-All-Around Germanium nMOSFET
Author :
Zhu, Shufang ; Wei, Kangliang ; Du, Gang ; Liu, Xiaoyan
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
Gate-All-Around mosfets have been investigated as promising new device structures, and Germanium is used for its high carrier mobility. In this paper, a 3D parallel Monte Carlo simulation of GAA Ge Nanowire nMOSFET with Effective Potential Method is implemented. Compared the simulation results with classical results, we can see that the quantum effects have an affect on the distribution of density, velocity and energy, and they make a decrease on the drain current as well.
Keywords :
MOSFET; Monte Carlo methods; germanium; nanowires; 3D Monte Carlo simulation; 3D parallel Monte Carlo simulation; GAA Ge nanowire nMOSFET; device structures; effective potential method; gate-all-around germanium nMOSFET; high carrier mobility; Logic gates; MOSFET circuits; MOSFETs; Monte Carlo methods; Quantum mechanics; Solids; Three dimensional displays; 3D full band Monte Carlo simulation; Gate-All-Around mosfet; Germanium; Nanowire; effective potential method;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117723
