Analysis and simulation of inverter employing SiC Schottky diode

Author

Gu, Yang ; Zhang, Yuming ; Zhang, Yimen ; Lü, Hongliang ; Jia, Renxu

Author_Institution

Key Lab. of Wide Band-gap Semicond., Mater. & Devices, Xidian Univ., Xi´´an, China

fYear

2011

fDate

17-18 Nov. 2011

Firstpage

1

Lastpage

2

Abstract

The effect of the diode reverse recovery on the performance of inverters is analyzed. The PSpice simulation of the SPWM full bridge inverter has been performed with the Si p-i-n ultra fast diode and the SiC Schottky diode respectively used as the free wheeling diode under the same condition. With their comparison, the results show that the SiC Schottky diode can greatly reduce the power loss of inverters. Further more, the effects of diode parameter CJO on reverse recovery characteristics have been discussed.

Keywords

PWM invertors; SPICE; Schottky diodes; p-i-n diodes; silicon compounds; wide band gap semiconductors; PSpice simulation; SPWM full bridge inverter; Schottky diode; SiC; diode reverse recovery; free wheeling diode; p-i-n ultra fast diode; reverse recovery characteristics; Inverters; P-i-n diodes; Performance evaluation; SPICE; Schottky diodes; Silicon carbide; Inverter; PSpice; SiC Schottky diode; reverse recovery characteristics; switching loss;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of

Conference_Location

Tianjin

ISSN

Pending

Print_ISBN

978-1-4577-1998-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/EDSSC.2011.6117728

Filename

6117728