Title :
Analysis and simulation of inverter employing SiC Schottky diode
Author :
Gu, Yang ; Zhang, Yuming ; Zhang, Yimen ; Lü, Hongliang ; Jia, Renxu
Author_Institution :
Key Lab. of Wide Band-gap Semicond., Mater. & Devices, Xidian Univ., Xi´´an, China
Abstract :
The effect of the diode reverse recovery on the performance of inverters is analyzed. The PSpice simulation of the SPWM full bridge inverter has been performed with the Si p-i-n ultra fast diode and the SiC Schottky diode respectively used as the free wheeling diode under the same condition. With their comparison, the results show that the SiC Schottky diode can greatly reduce the power loss of inverters. Further more, the effects of diode parameter CJO on reverse recovery characteristics have been discussed.
Keywords :
PWM invertors; SPICE; Schottky diodes; p-i-n diodes; silicon compounds; wide band gap semiconductors; PSpice simulation; SPWM full bridge inverter; Schottky diode; SiC; diode reverse recovery; free wheeling diode; p-i-n ultra fast diode; reverse recovery characteristics; Inverters; P-i-n diodes; Performance evaluation; SPICE; Schottky diodes; Silicon carbide; Inverter; PSpice; SiC Schottky diode; reverse recovery characteristics; switching loss;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117728
