DocumentCode :
2851752
Title :
3D modeling of CMOS image sensor: From process to opto-electronic response
Author :
Li, Z. M Simon ; Xiao, Y.G. ; Uehara, K. ; Lestrade, M. ; Gao, S. ; Fu, Y. ; Li, Z.Q. ; Zhou, Y.J.
Author_Institution :
Crosslight Software Inc., Burnaby, BC, Canada
fYear :
2011
fDate :
17-18 Nov. 2011
Firstpage :
1
Lastpage :
2
Abstract :
Three-dimensional (3D) modeling of CMOS active pixel image sensor from process to opto-electronic response is reported in this work. Process simulation is performed by Crosslight CSuprem while the optical effect is simulated by finite difference time domain technique and the electronic response by 3D drift-diffusion software APSYS. The electronic responses are presented versus various power intensity and illumination wavelength. The presented results demonstrate a methodological and technical capability for 3D modeling optimization of complex CMOS image sensor.
Keywords :
CMOS image sensors; finite difference time-domain analysis; integrated optoelectronics; optimisation; 3D drift-diffusion software APSYS; 3D modeling optimization; CMOS active pixel image sensor; crosslight CSuprem; finite difference time domain technique; illumination wavelength; opto-electronic response; power intensity; process simulation; Lenses; Microoptics; Optical crosstalk; Optical filters; Optical imaging; Optical sensors; Three dimensional displays; CMOS image sensors; Sensors; TCAD software; active pixel image sensor; opto-electronic modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
ISSN :
Pending
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
Type :
conf
DOI :
10.1109/EDSSC.2011.6117732
Filename :
6117732
Link To Document :
بازگشت