DocumentCode
2851906
Title
A memory system based on surface-charge transport
Author
Engeler, W. ; Tiemann, J. ; Baertsch, R.
Author_Institution
General Electric Co., Schenectady, NY, USA
Volume
XIV
fYear
1971
fDate
17-19 Feb. 1971
Firstpage
164
Lastpage
165
Abstract
A charge transport structure, superior to arrays utilizing three-phase clocking, wherein adjacent rows propagate in opposite directions, has been combined with compact refresh-turnaround circuits to produce a shift register memory system of high density and speed.
Keywords
Charge transfer; Clocks; Electrodes; Electron devices; Frequency; Pins; Reservoirs; Shift registers; Tail; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1971 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1971.1154965
Filename
1154965
Link To Document