• DocumentCode
    2852009
  • Title

    High performance Zn1-xMgxO TFTs for ultraviolet image sensors

  • Author

    Lin, X. ; Jiang, B.B. ; He, X. ; Li, S.J. ; Li, Y.L. ; Zhang, S.D.

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • fYear
    2011
  • fDate
    17-18 Nov. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper reports the studies on Zn1-xMgxO TFTs for UV image sensors. The channel layer of TFTs was deposited by reactive DC magnetron sputtering with Zn&Mg insetting metal target for the first time. These Zn1-xMgxO TFTs on glass substrate show excellent UV absorption window with absorption edge of 340 nm and optical transmittance of >;90% in the visible range. They display a field effect mobility of 0.02 cm2V-1 s-1, a threshold voltage of 10 V, an on/off ratio of 6×10B, and a subthreshold swing of 0.5 V/decade.
  • Keywords
    image sensors; sputtering; thin film transistors; zinc compounds; ZnMgO; channel layer; field effect mobility; glass substrate; high performance TFT; reactive DC magnetron sputtering; threshold voltage; ultraviolet image sensors; Absorption; Image sensors; Logic gates; Sputtering; Thin film transistors; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
  • Conference_Location
    Tianjin
  • ISSN
    Pending
  • Print_ISBN
    978-1-4577-1998-1
  • Electronic_ISBN
    Pending
  • Type

    conf

  • DOI
    10.1109/EDSSC.2011.6117745
  • Filename
    6117745
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2852009