Title :
High performance Zn1-xMgxO TFTs for ultraviolet image sensors
Author :
Lin, X. ; Jiang, B.B. ; He, X. ; Li, S.J. ; Li, Y.L. ; Zhang, S.D.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
This paper reports the studies on Zn1-xMgxO TFTs for UV image sensors. The channel layer of TFTs was deposited by reactive DC magnetron sputtering with Zn&Mg insetting metal target for the first time. These Zn1-xMgxO TFTs on glass substrate show excellent UV absorption window with absorption edge of 340 nm and optical transmittance of >;90% in the visible range. They display a field effect mobility of 0.02 cm2V-1 s-1, a threshold voltage of 10 V, an on/off ratio of 6×10B, and a subthreshold swing of 0.5 V/decade.
Keywords :
image sensors; sputtering; thin film transistors; zinc compounds; ZnMgO; channel layer; field effect mobility; glass substrate; high performance TFT; reactive DC magnetron sputtering; threshold voltage; ultraviolet image sensors; Absorption; Image sensors; Logic gates; Sputtering; Thin film transistors; Zinc oxide;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of
Conference_Location :
Tianjin
Print_ISBN :
978-1-4577-1998-1
Electronic_ISBN :
Pending
DOI :
10.1109/EDSSC.2011.6117745
