Title :
The field-effect modified transistor: A new compound transistor
Author :
Nordstrom, R. ; Meindl, J.
Author_Institution :
Stanford University, Stanford, CA, USA
Abstract :
This paper will describe a versatile new compound transistor structure-the field-effect modified (FEM) transistor- that offers a decade improvement in photo-transistor responsivity, a novel illumination-to-frequency converter, and very high noise-immunity in digital circuits.
Keywords :
Bipolar transistors; Capacitance; Dark current; Equations; FETs; Inverters; Lighting; Photoconductivity; Phototransistors; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1971 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1971.1154974
