• DocumentCode
    2852123
  • Title

    A fully-decoded 2048-bit electrically-programmable MOS ROM

  • Author

    Frohman-Bentchkowsky, D.

  • Author_Institution
    Intel Corp., Mountain View, CA, USA
  • Volume
    XIV
  • fYear
    1971
  • fDate
    17-19 Feb. 1971
  • Firstpage
    80
  • Lastpage
    81
  • Abstract
    A novel MOS charge storage transistor developed for an electrically-programmable ROM will be described. The memory element is a fully-decoded 2048-bit silicon gate MOS chip that provides access times of 500 ns (dynamic mode) or 800 ns (static mode).
  • Keywords
    Application software; Computer applications; Decoding; Dielectric substrates; FETs; Magnetic memory; Nonvolatile memory; Read only memory; Semiconductor memory; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1971 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1971.1154978
  • Filename
    1154978
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2852123