DocumentCode :
2852233
Title :
A fixed-address memory cell with normall-off-type schottky-barrier FETs
Author :
Drangeid, K. ; Broom, R. ; Jutzi, W. ; Mohr, Th. ; Moser, A. ; Sasso, Grazia
Author_Institution :
IBM research Lab., Rüschlikon, Switzerland
Volume :
XIV
fYear :
1971
fDate :
17-19 Feb. 1971
Firstpage :
68
Lastpage :
69
Abstract :
An integrated memory cell fabricated with normally-off MESFET devices will be described. A 1-μ channel length and contact separation provide high packing density (∼2.5 mil2/cell) and high speed. Supply voltage is below 1V.
Keywords :
Circuits; Doping; FETs; MESFETs; Microwave transistors; Ohmic contacts; Resistors; Schottky diodes; Semiconductor diodes; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1971 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1971.1154985
Filename :
1154985
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2852233
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