Title :
Power and frequency characteristics of Gunn-diodes on the basis of GaN
Author :
Arkusha, Yu V. ; Prokhorov, E.D. ; Storozhenko, I.P.
Author_Institution :
V. N. Karazin Kharkov Nat. Univ., Ukraine
Abstract :
The results of researches of power and frequency characteristics for Gunn-diode on the basis of GaN with different active length with dipole domain and accumulation layers is presented. It is possible to obtain generation using such diodes in submillimeter range.
Keywords :
Gunn diodes; III-V semiconductors; gallium compounds; wide band gap semiconductors; GaN; Gunn-diodes; frequency characteristics; power characteristics; Diodes; Frequency; Gallium arsenide; Gallium nitride; IEEE catalog; Microwave technology; Organizing;
Conference_Titel :
Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
Print_ISBN :
966-7968-80-4
DOI :
10.1109/CRMICO.2005.1564853
