Title :
Ultra low-power filter bank for hearing aid speech processor
Author :
Kwen-Siong Chong ; Barangi, M. ; Jaeyoung Kim ; Chang, Joseph S. ; Mazumder, Prasenjit
Author_Institution :
Electr. & Electron. Eng. Dept., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
An ultra-low power sub-threshold Finite Impulse Response (FIR) filter bank for hearing aid applications is demonstrated in 65nm CMOS technology. The system has a 2kb Static Random Access Memory (SRAM) interface optimized for sub-threshold operation. The system operates at 0.3V sub-threshold regime and consumes 10.4 μW at 0.96MHz clock frequency which corresponds to merely 0.6nJ per FIR operation.
Keywords :
CMOS integrated circuits; FIR filters; SRAM chips; channel bank filters; hearing aids; low-power electronics; CMOS technology; FIR; SRAM; finite impulse response filter bank; frequency 0.96 MHz; hearing aid speech processor; power 10.4 muW; size 65 nm; static random access memory; ultra low-power filter bank; voltage 0.3 V; Channel bank filters; Clocks; Computer architecture; Filter banks; Finite impulse response filter; Microprocessors; Random access memory; FIR filter; SRAM; channel bank; dynamic power; leakage power; sub-threshold;
Conference_Titel :
Subthreshold Microelectronics Conference (SubVT), 2012 IEEE
Conference_Location :
Waltham, MA
Print_ISBN :
978-1-4673-1586-9
DOI :
10.1109/SubVT.2012.6404314
