Title :
Generalized Test Bed for High-Voltage, High-Power SiC Device Characterization
Author :
Berning, David ; Hefner, Allen ; Ortiz-Rodriguez, Jose M. ; Hood, Colleen ; Rivera, Angel
Author_Institution :
Semicond. Electron. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD
Abstract :
A generalized 25 kV test bed developed to characterize high-voltage, high-power SiC devices is described. The test bed provides a high-speed (30 mus), high-voltage linear amplifier that is used as the pulsed power supply for parametric static measurements (curve tracer) and as the continuous high voltage power supply for inductive/resistive switching measurements. The test bed includes high-voltage inductors, clamping capacitors, and load modules for resistive and inductive load switching. An additional reconfigurable section of the test bed with plug-in current limiting and current sense resistors is used for parametric (curve tracer) device characterization. A flexible curve tracer software-based user interface is used to control several power supply and measurement instruments that collectively comprise a versatile pulsed curve tracer. The device under test (DUT) is mounted on a 20 kV electrically-isolated temperature-controlled heatsink. The test bed features containment of all high voltage circuits and the DUT within a clear plastic interlocked safety box. Several example measurements of SiC devices using the test bed are shown
Keywords :
automatic test equipment; carbon compounds; power amplifiers; power semiconductor devices; pulsed power supplies; semiconductor device testing; silicon compounds; wide band gap semiconductors; 20 kV; 25 kV; SiC; clamping capacitors; current limiting resistor; current sense resistor; curve tracer; high voltage MOSFET; high-power SiC device; high-voltage inductors; high-voltage linear amplifier; inductive load switching; parametric static measurements; parametric testing; power conversion; pulsed power supply; resistive load switching; semiconductor device characterization; software-based user interface; temperature-controlled heatsink; test bed; Circuit testing; Clamps; High power amplifiers; Inductors; Power measurement; Pulse amplifiers; Pulse measurements; Pulsed power supplies; Silicon carbide; Voltage; Curve tracer; DUT; SiC; high power; high voltage MOSFET; inductive load switching; parametric testing; power conversion; semiconductor device characterization;
Conference_Titel :
Industry Applications Conference, 2006. 41st IAS Annual Meeting. Conference Record of the 2006 IEEE
Conference_Location :
Tampa, FL
Print_ISBN :
1-4244-0364-2
Electronic_ISBN :
0197-2618
DOI :
10.1109/IAS.2006.256543
