DocumentCode :
2852371
Title :
Phase change memory modeling using Verilog-A
Author :
Liao, Yi-Bo ; Chen, Yan-Kai ; Chiang, Meng-Hsueh
Author_Institution :
Department of Electronic, Engineering, National Ilan University, Taiwan, China
fYear :
2007
fDate :
20-21 Sept. 2007
Firstpage :
159
Lastpage :
164
Abstract :
In this paper, we successfully develop a compact phase change memory (PCM) model using Verilog-A. As PCM has shown its potential for next generation memory device, a predictive, yet simple-to-use circuit model is crucial to the development. Since the Verilog-A modeling is flexible and portable for many circuit simulators, the proposed modeling technique can be widely used, as compared with conventional modeling schemes.
Keywords :
Amorphous materials; Circuits; Crystallization; Dynamic programming; Hardware design languages; Nonvolatile memory; Phase change materials; Phase change memory; Space vector pulse width modulation; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Behavioral Modeling and Simulation Workshop, 2007. BMAS 2007. IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
978-1-4244-1567-0
Type :
conf
DOI :
10.1109/BMAS.2007.4437544
Filename :
4437544
Link To Document :
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