Title :
Phase change memory modeling using Verilog-A
Author :
Liao, Yi-Bo ; Chen, Yan-Kai ; Chiang, Meng-Hsueh
Author_Institution :
Department of Electronic, Engineering, National Ilan University, Taiwan, China
Abstract :
In this paper, we successfully develop a compact phase change memory (PCM) model using Verilog-A. As PCM has shown its potential for next generation memory device, a predictive, yet simple-to-use circuit model is crucial to the development. Since the Verilog-A modeling is flexible and portable for many circuit simulators, the proposed modeling technique can be widely used, as compared with conventional modeling schemes.
Keywords :
Amorphous materials; Circuits; Crystallization; Dynamic programming; Hardware design languages; Nonvolatile memory; Phase change materials; Phase change memory; Space vector pulse width modulation; Threshold voltage;
Conference_Titel :
Behavioral Modeling and Simulation Workshop, 2007. BMAS 2007. IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
978-1-4244-1567-0
DOI :
10.1109/BMAS.2007.4437544