• DocumentCode
    2852440
  • Title

    A new type of gallium arsenide field-effect phototransistor

  • Author

    Swartz, G. ; Gonzalez, Adriana ; Dreeben, A.

  • Author_Institution
    RCA Labs., Princeton, NJ, USA
  • Volume
    XIV
  • fYear
    1971
  • fDate
    17-19 Feb. 1971
  • Firstpage
    134
  • Lastpage
    135
  • Abstract
    A gallium-arsenide field-effect phototransistor, which responds to infrared radiation at a wavelength of 1.5 μ will be covered. The device is fabricated from chromium-doped semi-insulating GaAs with a thin epitaxial N-type surface layer.
  • Keywords
    Chromium; Cutoff frequency; Electrons; Gallium arsenide; Immune system; Impurities; Insulation; Phototransistors; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1971 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1971.1154998
  • Filename
    1154998
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2852440