Title :
A new type of gallium arsenide field-effect phototransistor
Author :
Swartz, G. ; Gonzalez, Adriana ; Dreeben, A.
Author_Institution :
RCA Labs., Princeton, NJ, USA
Abstract :
A gallium-arsenide field-effect phototransistor, which responds to infrared radiation at a wavelength of 1.5 μ will be covered. The device is fabricated from chromium-doped semi-insulating GaAs with a thin epitaxial N-type surface layer.
Keywords :
Chromium; Cutoff frequency; Electrons; Gallium arsenide; Immune system; Impurities; Insulation; Phototransistors; Substrates; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1971 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1971.1154998
