Title :
Integrated X-band power amplifier utilizing Gunn and IMPATT diodes
Author_Institution :
Hewlett-Packard Co., Palo-Alto, Cal., USA
Abstract :
A two-stage injection-locked power amplifier has been developed for the 10.7-13.2-GHz range, having integral input-output isolators and an out-of-lock monitor. Gain is 30 dB at 1-W output power and 300-MHz locking bandwidth.
Keywords :
Active circuits; Active noise reduction; Circuit noise; Diodes; Frequency; Gunn devices; Isolators; Noise figure; Oscillators; Power amplifiers;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1972 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1972.1155015
