DocumentCode
2852688
Title
Integrated X-band power amplifier utilizing Gunn and IMPATT diodes
Author
Hanson, D.
Author_Institution
Hewlett-Packard Co., Palo-Alto, Cal., USA
Volume
XV
fYear
1972
fDate
16-18 Feb. 1972
Firstpage
38
Lastpage
39
Abstract
A two-stage injection-locked power amplifier has been developed for the 10.7-13.2-GHz range, having integral input-output isolators and an out-of-lock monitor. Gain is 30 dB at 1-W output power and 300-MHz locking bandwidth.
Keywords
Active circuits; Active noise reduction; Circuit noise; Diodes; Frequency; Gunn devices; Isolators; Noise figure; Oscillators; Power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1972 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1972.1155015
Filename
1155015
Link To Document