Comparison between <100> and <110> oriented channels in highly strained FDSOI pMOSFETs

Author

Morvan, Sylvain ; Andrieu, F. ; Nguyen, P. ; Hartmann, Jean-Michel ; Casse, M. ; Tabone, C. ; Toffoli, A. ; Allain, F. ; Schwarzenbach, W. ; Ghibaudo, Gerard ; Nguyen, Bac Xuan ; Daval, N. ; Haond, M. ; Poiroux, T. ; Faynot, O.

Author_Institution

LETI, CEA, Grenoble, France

fYear

2012

fDate

1-4 Oct. 2012

Firstpage

1

Lastpage

2

Abstract

We fabricated highly stressed FDSOI pMOSFETs down to 15nm gate length. The impact of different stressors (CESL, raised sources and drains, STI) is studied for different device geometries and channel orientations (<;100>; or <;110>;). We evidence that pMOSFETs along <;110>; are more sensitive to stress: STI degrades narrow devices compared to wide ones whereas compressive CESL (-3GPa) and SiGe S/D improve performances (+133% mobility, +16% I_ON on 10μm wide devices). This makes the <;110>; orientation the most favorable channel orientation for strained pMOSFETs on planar FDSOI.

Keywords

Ge-Si alloys; MOSFET; semiconductor materials; STI; SiGe; channel orientations; compressive CESL; highly strained FDSOI pMOSFET; highly stressed FDSOI pMOSFET; planar FDSOI; size 15 nm; Compressive stress; Logic gates; MOSFETs; Performance evaluation; Silicon; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference (SOI), 2012 IEEE International

Conference_Location

NAPA, CA

ISSN

1078-621X

Print_ISBN

978-1-4673-2690-2

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2012.6404362

Filename

6404362