DocumentCode :
2852764
Title :
Floating gate studies and photosensitivity investigations on charge-coupled devices
Author :
Copeland, M. ; Ibrahim, Amin ; Chamberlain, S. ; Jurgens, W. ; Chan, Chi Hou ; Caves, T.
Author_Institution :
Bell-Northern Research, Ltd., Ottawa, Ontario, Canada
Volume :
XV
fYear :
1972
fDate :
16-18 Feb. 1972
Firstpage :
134
Lastpage :
135
Abstract :
A report on the measurement of spectral response, NEP and speed of silicon gate charge-coupled imaging arrays will be offered. Additionally, the development of a discrete element CCD circuit model will be discussed, citing experimental results with floating-gate outputs.
Keywords :
Capacitance; Charge coupled devices; Charge transfer; Circuits; Clocks; Diodes; Electrodes; Nonlinear equations; Surface resistance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1972 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1972.1155020
Filename :
1155020
Link To Document :
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