• DocumentCode
    2852795
  • Title

    A little known benefit of FinFET over Planar MOSFET in highperformance circuits at advanced technology nodes

  • Author

    Sachid, Angada B. ; Chenming Hu

  • Author_Institution
    Electr. Eng. & Comput. Sci, Univ. of California Berkeley, Berkeley, CA, USA
  • fYear
    2012
  • fDate
    1-4 Oct. 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    There is a difference in the nature of parasitic capacitance with electrical width of planar MOSFET and FinFET. This difference can be used to optimize FinFET circuits to achieve lower power dissipation and power density compared to planar MOSFET circuits. To achieve the best results, circuits should be re-optimized considering the parasitics before replacing planar MOSFETs with FinFETs.
  • Keywords
    MOSFET; circuit optimisation; FinFET circuit optimization; advanced technology nodes; electrical width; high-performance circuits; parasitic capacitance; planar MOSFET circuits; power density; power dissipation; Density measurement; FinFETs; Inverters; Logic gates; Parasitic capacitance; Power system measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference (SOI), 2012 IEEE International
  • Conference_Location
    NAPA, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4673-2690-2
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2012.6404367
  • Filename
    6404367
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2852795