Title :
A little known benefit of FinFET over Planar MOSFET in highperformance circuits at advanced technology nodes
Author :
Sachid, Angada B. ; Chenming Hu
Author_Institution :
Electr. Eng. & Comput. Sci, Univ. of California Berkeley, Berkeley, CA, USA
Abstract :
There is a difference in the nature of parasitic capacitance with electrical width of planar MOSFET and FinFET. This difference can be used to optimize FinFET circuits to achieve lower power dissipation and power density compared to planar MOSFET circuits. To achieve the best results, circuits should be re-optimized considering the parasitics before replacing planar MOSFETs with FinFETs.
Keywords :
MOSFET; circuit optimisation; FinFET circuit optimization; advanced technology nodes; electrical width; high-performance circuits; parasitic capacitance; planar MOSFET circuits; power density; power dissipation; Density measurement; FinFETs; Inverters; Logic gates; Parasitic capacitance; Power system measurements;
Conference_Titel :
SOI Conference (SOI), 2012 IEEE International
Conference_Location :
NAPA, CA
Print_ISBN :
978-1-4673-2690-2
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2012.6404367
