Title :
Effectiveness of strained-Si technology for thin-body MOSFETs
Author :
Nuo Xu ; Changhwan Shin ; Andrieu, F. ; Ho, Byron ; Wade Xiong ; Weber, Olivier ; Poiroux, T. ; Bich-Yen Nguyen ; Munkang Choi ; Moroz, Victor ; Faynot, O. ; Tsu-Jae King Liu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA
Abstract :
Strain-induced mobility enhancement in thin-body MOSFETs is studied and the impact of silicon body thickness scaling on piezoresistance coefficients is analyzed to facilitate stress engineering for these advanced transistor structures. Various stressors are benchmarked in terms of their effectiveness to enhance nanometer-gate-length thin-body MOSFET performance.
Keywords :
MOSFET; elemental semiconductors; nanoelectronics; silicon; stress-strain relations; Si; advanced transistor structures; nanometer-gate-length thin-body MOSFET performance; piezoresistance coefficients; silicon body thickness scaling; strain-induced mobility enhancement; strained-silicon technology; stress engineering; FinFETs; Logic gates; Silicon; Stress; Substrates; Very large scale integration;
Conference_Titel :
SOI Conference (SOI), 2012 IEEE International
Conference_Location :
NAPA, CA
Print_ISBN :
978-1-4673-2690-2
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2012.6404369
