Title :
A vertical JFET with improved on to off current performance
Author :
Meenu, T.V. ; Komaragiri, Rama
Author_Institution :
Dept. of ECE, Nat. Inst. of Technol., Calicut, India
Abstract :
This paper presents a vertical silicon-on-insulator enhancement mode junction field effect transistor (SOI JFET) for a better on to off current performance. A major problem limiting the scaling of bulk silicon CMOS is the diminished improvement in on current and the increase in off current. The short channel effects associated with MOSFET are a serious limitation for the scaling. The main problem of decreased on to off current performance can be overcome by using a SOI JFET. Here a 20nm SOI JFET (in 2D) has been analyzed using MEDICI® (a Synopsis® 2D-device simulation tool).
Keywords :
CMOS integrated circuits; MOSFET; junction gate field effect transistors; silicon-on-insulator; MEDICI®; MOSFET; SOI JFET; bulk silicon CMOS; improved on to off current performance; short channel effects; vertical JFET; vertical silicon-on-insulator enhancement mode junction field effect transistor; JFETs; Junctions; Logic gates; Silicon; Substrates; Threshold voltage; Junction field effect transistor (JFET); SOI JFET; on to off current ratio;
Conference_Titel :
Emerging Research Areas and 2013 International Conference on Microelectronics, Communications and Renewable Energy (AICERA/ICMiCR), 2013 Annual International Conference on
Conference_Location :
Kanjirapally
Print_ISBN :
978-1-4673-5150-8
DOI :
10.1109/AICERA-ICMiCR.2013.6575962