High frequency resonant MOS-FET DC-DC converter

Author

Karube, K. ; Nomura, T. ; Nakano, T.

Author_Institution

Fuji Electr. Corp. Res. & Dev. Ltd., Tokyo, Japan

fYear

1988

fDate

11-14 April 1988

Firstpage

26

Abstract

The authors explain the operation of a 100 W half-bridge resonant DC-DC converter, the method of determining the LC constants, and the condition of gate drive for achieving no-loss switching. Since the circuit operation is of a zero-volt-switching type, the switching loss at turn-off as well as turn-on can be zeroed by strengthening the gate drive circuit. It is confirmed that the LC constants can be determined by using a simple circuit model, and that setting a low resonant capacitor voltage is effective for reducing the main circuit loss. The characteristics of some DC-DC converters trial-manufactured on the basis of these results are shown.<>

Keywords

bridge circuits; field effect transistor circuits; power convertors; switching circuits; 100 W; HF converter; LC constants; MOSFET; circuit model; gate drive; half-bridge resonant DC-DC converter; low resonant capacitor voltage; no-loss switching; power converter; switching loss; zero-volt-switching type; DC-DC power converters; Frequency conversion; Inductors; RLC circuits; Resonance; Resonant frequency; Switches; Switching circuits; Switching converters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1988. PESC '88 Record., 19th Annual IEEE

Conference_Location

Kyoto, Japan

Type

conf

DOI

10.1109/PESC.1988.18112

Filename

18112