• DocumentCode
    2853005
  • Title

    Dependence of film surface roughness on surface migration and lattice size in thin film deposition

  • Author

    Jianqiao Huang ; Gangshi Hu ; Orkoulas, G. ; Christofides, P.D.

  • Author_Institution
    Dept. of Chem. & Biomol. Eng., Univ. of California, Los Angeles, CA, USA
  • fYear
    2011
  • fDate
    June 29 2011-July 1 2011
  • Firstpage
    2957
  • Lastpage
    2962
  • Abstract
    This work focuses on the study of the dependence of film surface roughness on surface migration and lattice size in thin film deposition processes. Two different models of thin film deposition processes, in both one-dimension and two dimensions, are considered: random deposition with surface relaxation model and deposition/migration model. Surface roughness is defined as the root-mean-squares of the surface height profile and is found to evolve (starting from a flat initial surface zero value) to steady-state values at large times. A linear and a logarithmic dependence of surface roughness square on lattice size are observed in the one-dimensional and two-dimensional lattice models, respectively, in both the random deposition with surface relaxation model and the deposition/migration model with zero activation energy contribution from each neighboring particle. Furthermore, a stronger lattice-size dependence is found in the deposition/migration model when the migration activation energy contribution from each neighboring particle becomes significant.
  • Keywords
    surface roughness; thin films; film surface roughness; lattice size; one-dimensional lattice models; random deposition; root-mean-squares; steady-state values; surface height profile; surface migration; surface relaxation model; thin film deposition; two-dimensional lattice models; zero activation energy; Lattices; Mathematical model; Rough surfaces; Steady-state; Surface morphology; Surface roughness; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    American Control Conference (ACC), 2011
  • Conference_Location
    San Francisco, CA
  • ISSN
    0743-1619
  • Print_ISBN
    978-1-4577-0080-4
  • Type

    conf

  • DOI
    10.1109/ACC.2011.5991154
  • Filename
    5991154