Title :
Electrically reprogrammable nonvolatile semiconductor memory
Author :
Tarui, Yoichiro ; Hayashi, Yasuhiro ; Nagai, Kanto
Author_Institution :
Electrotechnical Lab., Tokyo, Japan
Abstract :
Devices capable of electrically-reprogrammable non-volatile memory action have been fabricated. Writing and rewriting are done by the injection of electrons and holes, respectively, into the floating silicon gate embedded in the oxide.
Keywords :
Avalanche breakdown; Electrons; Equivalent circuits; Laboratories; MOSFETs; Nonvolatile memory; Read-write memory; Semiconductor memory; Voltage; Writing;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1972 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1972.1155034
