Title :
The role of the incomplete ionization on the operation of Junctionless Nanowire Transistors
Author :
Trevisoli, R.D. ; Doria, R.T. ; de Souza, M. ; Ferain, I. ; Das, S. ; Pavanello, Marcelo Antonio
Author_Institution :
PSI, LSI, Univ. of Sao Paulo, Sao Paulo, Brazil
Abstract :
This work presented an evaluation of the zero temperature coefficient bias in Junctionless Nanowire Transistors. Contrarily to results of previous works, this paper shows that JNTs can present a ZTC point, which depends on the series resistance and its dependence on the temperature.
Keywords :
MOSFET; nanoelectronics; nanowires; JNT; MOSFET; ZTC point; junctionless nanowire transistors; series resistance; zero temperature coefficient bias; Doping; Ionization; Logic gates; MOS devices; Resistance; Threshold voltage; Transconductance;
Conference_Titel :
SOI Conference (SOI), 2012 IEEE International
Conference_Location :
NAPA, CA
Print_ISBN :
978-1-4673-2690-2
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2012.6404384
