Title :
Optimized CMOS-SOI process for high performance RF switches
Author :
Joshi, A.B. ; Lee, Sang-Rim ; Chen, Y.Y. ; Lee, T.Y.
Author_Institution :
Skyworks Solutions, Inc., Irvine, CA, USA
Abstract :
In recent years, CMOS on Silicon-on-Insulator has rapidly evolved as a mainstream technology for switches used in wireless applications. Since such applications can involve switching high power levels (35 dBm) at high frequencies (~2 GHz), the technology considerations are substantially different than those for SOI used in high speed, small signal applications such as microprocessors. This paper provides an overview of key technology challenges and trade-offs.
Keywords :
CMOS integrated circuits; field effect MMIC; microwave switches; silicon-on-insulator; Si; high performance RF switches; microprocessors; optimized CMOS-SOI process; silicon-on-insulator; Antennas; Linearity; Optimization; Radio frequency; Substrates; Switches; Wireless communication;
Conference_Titel :
SOI Conference (SOI), 2012 IEEE International
Conference_Location :
NAPA, CA
Print_ISBN :
978-1-4673-2690-2
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2012.6404385
