Integrated passive components in MCM-Si technology and their applications in RF-systems

Integrated passive components and their application in RF systems in a silicon-on-silicon multichip technology is presented. In high frequency devices, the main use of passive components is for decoupling purposes, matching networks, LC filters, tank circuits, hybrids, transformers, attenuators and power dividers. In most cases, the design of precise component values and high Q-factors for the inductors and capacitors is necessary, which is a difficult task for integrated components on silicon. General design aspects of passive components with their facilities and restrictions to improve their high frequency behaviour and quality factors are described. In particular, the impact of different substrate resistivities on their performance is pointed out. Test structures on substrates with resistivities of 15 Ωcm, 2000 Ωcm and 20000 Ωcm were therefore manufactured