DocumentCode :
2853238
Title :
Mode engineering for hybrid SOI/III-V optical devices
Author :
Spector, S.J. ; Swint, R.B. ; Chen, C.L. ; Plant, J.J. ; Lyszczarz, T.M. ; Juodawlkis, P.W.
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
fYear :
2012
fDate :
1-4 Oct. 2012
Firstpage :
1
Lastpage :
2
Abstract :
Optical amplifiers are demonstrated by direct bonding III-V gain layers to SOI waveguides which include 2-D and 3-D adiabatic tapers. The 3-D tapers have a low loss of 0.1 dB per mode conversion, the lowest demonstrated for coupling between SOI waveguides of this type. The 2-D tapers are used to control interaction with the III-V gain region. An integrated amplifier delivered 14 dB intra chip gain using the new adiabatic tapered waveguides.
Keywords :
III-V semiconductors; optical fibre amplifiers; optical waveguides; silicon-on-insulator; 2D adiabatic tapers; 3D adiabatic tapers; SOI waveguides; adiabatic tapered waveguides; direct bonding III-V gain layers; gain 14 dB; hybrid SOI-III-V optical devices; integrated amplifier; intra-chip gain; mode engineering; optical amplifiers; Gain; Optical amplifiers; Optical fiber amplifiers; Silicon; Strips; Waveguide transitions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference (SOI), 2012 IEEE International
Conference_Location :
NAPA, CA
ISSN :
1078-621X
Print_ISBN :
978-1-4673-2690-2
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2012.6404399
Filename :
6404399
Link To Document :
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