Title :
Characterization of a Multilevel HV-IGBT Module for Distribution Applications
Author :
Lai, Jih-Sheng ; Hefner, Allen ; Maitra, Arindam ; Goodman, Frank
Author_Institution :
Dept. of ECE, Virginia Polytech. Inst. & State Univ., Blacksburs, VA
Abstract :
A newly proposed 3-level high-voltage insulated-gate-bipolar-transistor (HV-IGBT) module has been developed and tested under static conduction, dynamic switching, and system level pulse-width-modulation (PWM) operation. The conduction voltage drops and switching turn-on and -off energies were measured for loss estimation. Switching voltage and current waveforms were used for parasitic inductance and output capacitance estimation. With sufficiently low parasitic inductance and fast switching speed, the module was successfully operating at 20-kHz switching for a multilevel converter based intelligent universal transformer (IUT), and the proposed multilevel HV-IGBT module is evidently the enabling technology for future utility distribution-level power electronics applications
Keywords :
PWM power convertors; high-voltage engineering; insulated gate bipolar transistors; power bipolar transistors; power distribution; power transformers; 20 kHz; conduction voltage; dynamic switching; insulated gate bipolar transistor; intelligent universal transformer; multilevel converter; output capacitance estimation; parasitic inductance estimation; pulse-width-modulation; static conduction; Energy measurement; Inductance; Insulation; Loss measurement; Parasitic capacitance; Pulse width modulation; Space vector pulse width modulation; Switching converters; System testing; Voltage; HV-IGBT; Intelligent Universal Transformer; Multilevel HV-IGBT Module;
Conference_Titel :
Industry Applications Conference, 2006. 41st IAS Annual Meeting. Conference Record of the 2006 IEEE
Conference_Location :
Tampa, FL
Print_ISBN :
1-4244-0364-2
Electronic_ISBN :
0197-2618
DOI :
10.1109/IAS.2006.256610
