• DocumentCode
    2853321
  • Title

    Nonvolatile, electrically-alterable MAOS memory

  • Author

    Sato, Seiki ; Yamaguchi, Toru ; Aoki, Toyohiro

  • Author_Institution
    Sony Corp., Kanagawa, Japan
  • Volume
    XV
  • fYear
    1972
  • fDate
    16-18 Feb. 1972
  • Firstpage
    188
  • Lastpage
    189
  • Abstract
    An N-channel field-effect memory transistor using a metal alumina-oxide-semiconductor type structure has been developed. Memory is nonvolatile, electrically programmable, electrically alterable and nondestructively readout, and holds stored date indefinitely.
  • Keywords
    Chemicals; Circuits; Decoding; FETs; Insulation; Nonvolatile memory; Read only memory; Read-write memory; Silicon compounds; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1972 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1972.1155053
  • Filename
    1155053
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2853321