Expanded Thermal Model for IGBT Modules

Author

Lu, B. ; Hudgins, J.L. ; Bryant, A.T. ; Santi, E. ; Palmer, P.R.

Author_Institution

Dept. of Electr. Eng., Nebraska Univ., Lincoln, NE

Volume

2

fYear

2006

fDate

8-12 Oct. 2006

Firstpage

777

Lastpage

784

Abstract

Heat dissipation problems with simultaneous heat generation in IGBT modules are calculated and simulated based on two developed thermal models. One is the analytical thermal model, which is based on Fourier series method. The other is a finite difference model, which relies on the numerical solutions method. The result of two models has been compared. The difference between them has been illustrated and more reliable model has been chosen for more complicate thermal calculation. In order to achieve more accurate temperature distribution, transient thermal response of certain IGBT module has been simulated with extended thermal models

Keywords

Fourier series; cooling; finite difference methods; insulated gate bipolar transistors; modules; semiconductor device models; semiconductor device packaging; thermal management (packaging); Fourier series; finite-difference method; heat dissipation; heat generation; insulated gate bipolar transistor; power cycles; thermal calculation; thermal models; Circuit simulation; Electronic packaging thermal management; Finite difference methods; Insulated gate bipolar transistors; Power dissipation; Power electronics; Semiconductor device packaging; Semiconductor materials; Temperature distribution; Thermal expansion; Finite-difference method; Fourier-series; IGBT; modules; packaging; power cycles; thermal models;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2006. 41st IAS Annual Meeting. Conference Record of the 2006 IEEE

Conference_Location

Tampa, FL

ISSN

0197-2618

Print_ISBN

1-4244-0364-2

Electronic_ISBN

0197-2618

Type

conf

DOI

10.1109/IAS.2006.256614

Filename

4025300