Design of PNPN crosspoint switch for wideband telephone system applications

FABRICATION of PNPN crosspoint arrays has been described earlier 1. A typical I-V characteristic for these devices is shown in Figure 1. Under forward bias conditions small current (<15nA) is passing through the device until a breakover voltage (VBo) is reached. After a switching current (Is), the devices breakdown to a low impedance state, with a holding current.