Title :
Modelling and simulation of power MOSFETs and power diodes
Author :
Xu, C.H. ; Schroder, Dieter
Author_Institution :
Lehrstuhl fuer Elektrische Antriebstech., Tech. Univ. Muenchen, West Germany
Abstract :
A model of a power MOSFET has been improved and implemented in SPICE. A method for parameter extraction from electrical measurements has been developed. The model is simple and accurate, and the simulation results show good agreement with the measurements. The switching behavior of the MOSFETs has been simulated and analyzed, and the parasitic oscillation in parallel circuits has been investigated. A way to avoid this undesirable effect is proposed and proved. The development of an electrical analysis model for the p-i-n power diode is reported. The internal processes during switching have been investigated using physical device simulation, and a one-dimensional solution has been obtained.
Keywords :
insulated gate field effect transistors; power transistors; semiconductor device models; semiconductor diodes; semiconductor switches; SPICE; electrical measurements; model; p-i-n diode; parallel circuits; parameter extraction; parasitic oscillation; power MOSFET; power diodes; simulation; switching behavior; Analytical models; Circuit simulation; Electric resistance; Electric variables measurement; Electrical resistance measurement; MOSFETs; Power electronics; SPICE; Semiconductor diodes; Switches;
Conference_Titel :
Power Electronics Specialists Conference, 1988. PESC '88 Record., 19th Annual IEEE
Conference_Location :
Kyoto, Japan
DOI :
10.1109/PESC.1988.18118
