Modelling and simulation of power MOSFETs and power diodes

Author

Xu, C.H. ; Schroder, Dieter

Author_Institution

Lehrstuhl fuer Elektrische Antriebstech., Tech. Univ. Muenchen, West Germany

fYear

1988

fDate

11-14 April 1988

Firstpage

76

Abstract

A model of a power MOSFET has been improved and implemented in SPICE. A method for parameter extraction from electrical measurements has been developed. The model is simple and accurate, and the simulation results show good agreement with the measurements. The switching behavior of the MOSFETs has been simulated and analyzed, and the parasitic oscillation in parallel circuits has been investigated. A way to avoid this undesirable effect is proposed and proved. The development of an electrical analysis model for the p-i-n power diode is reported. The internal processes during switching have been investigated using physical device simulation, and a one-dimensional solution has been obtained.

Keywords

insulated gate field effect transistors; power transistors; semiconductor device models; semiconductor diodes; semiconductor switches; SPICE; electrical measurements; model; p-i-n diode; parallel circuits; parameter extraction; parasitic oscillation; power MOSFET; power diodes; simulation; switching behavior; Analytical models; Circuit simulation; Electric resistance; Electric variables measurement; Electrical resistance measurement; MOSFETs; Power electronics; SPICE; Semiconductor diodes; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1988. PESC '88 Record., 19th Annual IEEE

Conference_Location

Kyoto, Japan

Type

conf

DOI

10.1109/PESC.1988.18118

Filename

18118