Title :
Surface-charge RAM system
Author :
Engeler, W. ; Tiemann, J. ; Baertsch, R.
Author_Institution :
General Electric Co., Schenectady, N.Y., USA
Abstract :
THE APPLICATION of charge-transfer structures to shift registers for analog signal processing and serial memories promises considerable improvement over conventional technologies 1-3. Not only does their topological simplicity permit smaller and faster structures to he built, but the reduction in the number of vias (contacts to the silicon) promises processing advantages as well. This paper will present a storage cell suitable for word organized dynamic random access memory (RAM) which utilizes the benefits of surface-charge devices.
Keywords :
Delay; Electrodes; Parasitic capacitance; Random access memory; Read-write memory; Silicon; Voltage; Writing;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1972 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1972.1155077
