Title :
Numerical experiment for 2500 V double gate bipolar-mode MOSFETs (DGIGBT) and analysis for large safe operating area (SOA)
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
A double-gate bipolar-mode MOSFET (DGIGBT) is proposed as a high-speed switching device exceeding 2500 V. The DGIGBT inherently has a reverse conducting diode. It is numerically predicted that the device will attain a better tradeoff between turn-off time and forward voltage than an 1800-V single-gate device. It is experimentally confirmed that DGIGBTs have an SOA exceeding the theoretical power dissipation limit for an n-p-n transistor, and it is shown why the SOA can exceed this limit.
Keywords :
bipolar transistors; insulated gate field effect transistors; power transistors; semiconductor switches; 2500 V; DGIGBT; SOA; double gate IGBT; double-gate bipolar-mode MOSFET; forward voltage; high-speed switching device; large safe operating area; numerical experiment; power dissipation limit; reverse conducting diode; turn-off time; Anodes; Charge carrier lifetime; Charge carrier processes; Current-voltage characteristics; Diodes; Electrodes; Electrons; Low voltage; MOSFET circuits; Turning;
Conference_Titel :
Power Electronics Specialists Conference, 1988. PESC '88 Record., 19th Annual IEEE
Conference_Location :
Kyoto, Japan
DOI :
10.1109/PESC.1988.18119
