Simulation of switching processes in turn-off thyristors

Author

Masada, Eisuke ; Tamura, Minoru ; Nakajima, Tatsuhito

Author_Institution

Dept. of Electr. Eng., Tokyo Univ., Japan

fYear

1988

fDate

11-14 April 1988

Firstpage

91

Abstract

Fundamental equations describing carrier transport, current continuity, and potential distribution are used in a finite-difference scheme to model switching phenomena in semiconductor power devices. An irregular and variable mesh approach is introduced that can reduce computation time by 40%. If the device structure satisfies certain conditions, the method works even more effectively. The program is used to analyze gate-turn-off (GTO) thyristor and static-induction thyristor (SIT) switching. Carrier concentration, potential, and current distribution transients during switching of the devices are shown. The current squeeze and concentration during turn-off in the GTO are related to the gate structure. The effective channel width of the SIT is also determined through numerical analysis.<>

Keywords

carrier density; current distribution; semiconductor device models; semiconductor switches; thyristors; GTO; SIT; carrier concentration; carrier transport; current continuity; current distribution transients; effective channel width; finite-difference scheme; gate-turn-off; model; numerical analysis; potential distribution; semiconductor power devices; simulation; static-induction thyristor; switching processes; turn-off thyristors; variable mesh approach; Computational modeling; Convergence; Current density; Current distribution; Difference equations; Finite difference methods; Power electronics; Power semiconductor switches; Semiconductor devices; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1988. PESC '88 Record., 19th Annual IEEE

Conference_Location

Kyoto, Japan

Type

conf

DOI

10.1109/PESC.1988.18120

Filename

18120