Title :
Transformerless capacitive coupling of gate signals for series operation of power MOS devices
Author :
Hess, Herbert L. ; Baker, R. Jacob
Author_Institution :
Idaho Univ., Moscow, ID, USA
Abstract :
A reliable configuration for triggering a series string of power MOS devices without the use of transformer coupling is presented. A capacitor is inserted between the gate and ground of each MOSFET, except for the bottom MOSFET in the stack. Using a single input voltage signal to trigger the bottom MOSFET, a voltage division across the network of device capacitance and inserted capacitances triggers the entire series stack reliably. Design formulae are presented and simple circuit protection is discussed. Simulation shows reliable operation and experimental verification is presented. Application of the method is applied to series IGBTs
Keywords :
power MOSFET; power semiconductor switches; semiconductor device models; semiconductor device testing; switching; MOSFET triggering; capacitor; power MOS devices; series IGBTs; series operation; single input voltage signal; transformerless capacitive gate signals coupling; voltage division; Capacitance; Capacitors; Circuit simulation; Diodes; Insulated gate bipolar transistors; MOS devices; MOSFET circuits; Power MOSFET; Surge protection; Voltage;
Conference_Titel :
Electric Machines and Drives, 1999. International Conference IEMD '99
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-5293-9
DOI :
10.1109/IEMDC.1999.769210