Potential barrier height dependence on biased voltages of static induction thyristors

Dependence of the potential barrier height φB on the biased voltages of static induction thyristors (SITh) is studied by using the numerical simulator SG-framework, concentrating on the forward blocking state, and an exponential relationship is presented through a normalized approach. The I–V characterize is of SITh is calculated by simulation and explained by potential barrier height. The cathode current IK and anode current IA as well as SIT drain current ID are analytically compared. The results prove the validity of the SIT-BJT model. The switching characteristics are also mentioned, and the working frequency of the static induction thytistors can be used in high frequency circuits.