DocumentCode
2854147
Title
Characteristics, applications and challenges of SiC power devices for future power electronic system
Author
Zhao, Bin ; Qin, Haihong ; Wen, Jiaopu ; Yan, Yangguang
Author_Institution
Jiangsu Key Laboratory of New Energy Generation and Power Conversion, Nanjing University of Aeronautics and Astronautics, China
Volume
1
fYear
2012
fDate
2-5 June 2012
Firstpage
23
Lastpage
29
Abstract
Today, there is an increasing demand for high frequency, high power and high temperature applications where the converters will operate in a harsh environment. Switching devices based on Silicon Carbide (SiC) offer a significant performance improvement on the switch level compared with Si devices. This paper describes the current state of the art in SiC devices briefly. Then the research and development of applying SiC devices in military and industrial applications are given respectively. And challenges regarding broader implementation of SiC devices today are emphasized. Finally, a short outlook into the future for upcoming SiC power devices is given.
Keywords
Inverters; Schottky diodes; Silicon; Silicon carbide; Switches; JFETs; SiC semiconductor; high temperature; power density;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Motion Control Conference (IPEMC), 2012 7th International
Conference_Location
Harbin, China
Print_ISBN
978-1-4577-2085-7
Type
conf
DOI
10.1109/IPEMC.2012.6258833
Filename
6258833
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