• DocumentCode
    2854147
  • Title

    Characteristics, applications and challenges of SiC power devices for future power electronic system

  • Author

    Zhao, Bin ; Qin, Haihong ; Wen, Jiaopu ; Yan, Yangguang

  • Author_Institution
    Jiangsu Key Laboratory of New Energy Generation and Power Conversion, Nanjing University of Aeronautics and Astronautics, China
  • Volume
    1
  • fYear
    2012
  • fDate
    2-5 June 2012
  • Firstpage
    23
  • Lastpage
    29
  • Abstract
    Today, there is an increasing demand for high frequency, high power and high temperature applications where the converters will operate in a harsh environment. Switching devices based on Silicon Carbide (SiC) offer a significant performance improvement on the switch level compared with Si devices. This paper describes the current state of the art in SiC devices briefly. Then the research and development of applying SiC devices in military and industrial applications are given respectively. And challenges regarding broader implementation of SiC devices today are emphasized. Finally, a short outlook into the future for upcoming SiC power devices is given.
  • Keywords
    Inverters; Schottky diodes; Silicon; Silicon carbide; Switches; JFETs; SiC semiconductor; high temperature; power density;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Motion Control Conference (IPEMC), 2012 7th International
  • Conference_Location
    Harbin, China
  • Print_ISBN
    978-1-4577-2085-7
  • Type

    conf

  • DOI
    10.1109/IPEMC.2012.6258833
  • Filename
    6258833